1 rf power mosfet transistor 60w, 2-175mhz, 12v m/a-com products released; rohs compliant DU1260T ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. features ? n-channel enhancement mode device ? dmos structure ? lower capacitances for broadband operation ? high saturated output power ? lower noise figure than bipolar devices ? specifically designed for 12 volt applications package outline absolute maximum ratings at 25 c parameter rating drain-source voltage 40 gate-source voltage 20 drain-source current 24 power dissipation 250 junction temperature 200 storage temperature -55 to +150 thermal resistance 0.7 symbol v ds v gs i ds p d t j t stg jc units v v a w c c c/w millimeters inches min max min max a 24.38 25.15 .960 .990 b 18.29 18.54 .720 .730 c 21.36 21.74 .841 .856 d 12.60 12.85 .496 .506 e 5.33 5.59 .210 .220 f 5.08 5.33 .200 .210 g 3.81 4.06 .150 .160 h 3.10 3.15 .122 .128 j 2.51 2.67 .099 .105 k 4.06 4.57 .160 .180 l 6.68 7.49 .263 .295 letter dim m .10 .15 .004 .006 electrical characteristics at 25c parameter symbol min max units test conditions drain-source breakdown voltage bv dss 40 - v v gs = 0.0 v , i ds = 30.0 ma drain-source leakage current i dss - 6.0 ma v gs = 15.0 v , v gs = 0.0 v gate-source leakage current i gss - 6.0 a v gs = 20.0 v , v ds = 0.0 v gate threshold voltage v gs(th) 2.0 6.0 v v ds = 10.0 v , i ds = 600 ma forward transconductance g m 3.0 - s v ds = 10.0 v , i ds = 6000 ma , v gs = 1.0 v input capacitance c iss - 200 pf v ds = 12.0 v , f = 1.0 mhz output capacitance c oss - 240 pf v ds = 12.0 v , f = 1.0 mhz reverse capacitance c rss - 48 pf v ds = 12.0 v , f = 1.0 mhz drain efficiency ? d 60 - % v dd = 12.0 v, i dq = 600 ma, p out = 60 w f =175 mhz load mismatch vswr-t - 30:1 - v dd = 12.0 v, i dq = 600 ma, p out = 60 w f =175 mhz power gain g p 8.0 - db v dd = 12.0 v, i dq = 600 ma, p out = 60 w f =175 mhz f (mhz) z in ( ? ) z load ( ? ) 30 4.5 - j8.0 4.6 - j3.0 100 1.4 - j4.0 1.4 - j8.0 175 1.0 - j0.5 1.0 - j0.5 v dd = 12v, i dq = 600ma, p out = 60w typical device impedance z in is the series equivalent in put impedance of the device from gate to source. z load is the optimum series equivalent load impedance as measured from drain to ground.
2 rf power mosfet transistor 60w, 2-175mhz, 12v m/a-com products released; rohs compliant DU1260T ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. frequency (mhz) typical broadband performance curves efficiency (%) drain efficiency vs frequency v dd =12 v i dq =600 ma p out =60 w frequency (mhz) gain vs frequency v dd =12 v i dq =600 ma p out =60w power output vs power input v dd =12 v i dd =600 ma supply voltage (v) power output vs supply voltage i dq =600 ma f=175 mhz p in =8.0 w 80 70 60 50 40 30 20 10 0 50 150 200 gain (db) 25 20 15 10 5 0 25 50 100 150 175 power output (w) 0 0.2 0.3 1 2 3 4 5 6 7 power input (w) 80 70 60 50 40 power output (w) 15 10 80 70 60 50 40 30 20 10 0 175mhz 100mhz 30mhz
3 rf power mosfet transistor 60w, 2-175mhz, 12v m/a-com products released; rohs compliant DU1260T ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. test fixture schematic test fixture assembly
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